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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF21085/D
The RF MOSFET Line
RF Power Field Effect Transistors
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 1000 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Output Power -- 19 Watts Avg. Power Gain -- 13.6 dB Efficiency -- 23% IM3 -- - 37.5 dBc ACPR -- - 41 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 90 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MAXIMUM RATINGS
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature
N - Channel Enhancement - Mode Lateral MOSFETs
MRF21085R3 MRF21085SR3 MRF21085LSR3
2170 MHz, 90 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465 - 06, STYLE 1 NI - 780 MRF21085R3
CASE 465A - 06, STYLE 1 NI - 780S MRF21085SR3, MRF21085LSR3
Symbol VDSS VGS PD Tstg TJ
Value 65 - 0.5, +15 224 1.28 - 65 to +150 200
Unit Vdc Vdc Watts W/C C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (1) 0.78 Unit C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum)
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 6
MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA
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MRF21085R3 MRF21085SR3 MRF21085LSR3 1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (DC) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1000 mAdc) VGS(th) VGS(Q) VDS(on) gfs 2 3 -- -- -- 3.9 0.18 6 4 5 0.21 -- Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 10 1 Vdc Adc Adc Symbol Min Typ Max Unit
Freescale Semiconductor, Inc...
Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1.0 MHz)
Crss
--
3.6
--
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW at f1 - 10 MHz and f2 +10 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz at f1 - 5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Output Mismatch Stress (VDD = 28 Vdc, Pout = 90 W CW, IDQ = 1000 mA, f = 2170 MHz VSWR = 5:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. (continued) Gps 12 13.6 -- dB
20
23
--
%
IM3
--
- 37.5
- 35
dBc
ACPR
--
- 41
- 38
dBc
IRL
--
- 12
-9
dB
No Degradation In Output Power Before and After Test
MRF21085R3 MRF21085SR3 MRF21085LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 2
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ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted)
Characteristic FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (continued) Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two - Tone Intermodulation Distortion (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Gps -- 13.6 -- dB Symbol Min Typ Max Unit
--
36
--
%
IMD
--
- 31
--
dBc
IRL
--
- 12
--
dB
Freescale Semiconductor, Inc...
Pout, 1 dB Compression Point (VDD = 28 Vdc, IDQ = 1000 mA, f = 2170 MHz)
P1dB
--
100
--
W
MOTOROLA RF DEVICE DATA
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MRF21085R3 MRF21085SR3 MRF21085LSR3 3
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VGG R1 + R2 C5 C4 C3 C2 C7 R3 B1 + C8 L1 C9 C10 VDD + C11 + C12 R4
Z4 RF INPUT
Z8 RF OUTPUT
Z1 C1
Z2
Z3 DUT
Z5
Z6 C6
Z7
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Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8
0.750 1.015 0.480 0.750 0.610 0.885 0.720 0.800
x 0.084 x 0.084 x 0.800 x 0.050 x 0.800 x 0.084 x 0.084 x 0.070
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Board PCB
0.030 Glass Teflon, Keene GX - 0300 - 55 - 22, r = 2.55 Etched Circuit Boards MRF21085 Rev. 3, CMR
Figure 1. MRF21085 Test Circuit Schematic Table 1. MRF21085 Test Circuit Component Designations and Values
Designators B1 C1, C6 C2 C3, C9 C4, C10 C5 C7 C8 C11, C12 L1 N1, N2 R1 R2 R3, R4 Description Short Ferrite Bead, Fair Rite, #2743019447 43 pF Chip Capacitors, ATC #100B430JCA500X 10 pF Chip Capacitor, ATC #100B100JCA500X 1000 pF Chip Capacitors, ATC #100B102JCA500X 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 1.0 mF Tantalum Chip Capacitor, Kemet #T491C105M050 2.7 pF Chip Capacitor, ATC #100B2R7JCA500X 10 mF Tantalum Chip Capacitor, Kemet #T495X106K035AS4394 22 mF Tantalum Chip Capacitors, Kemet #T491X226K035AS4394 1 Turn, #20 AWG, 0.100 ID, Motorola Type N Flange Mounts, Omni Spectra #3052 - 1648 - 10 1.0 k, 1/8 W Chip Resistor 180 k, 1/8 W Chip Resistor 10 , 1/8 W Chip Resistors
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C2 R1 B1 R2 C5 C4 CUT OUT WB1 WB2 C3 R3 L1 C9 C11 C12 C10 R4 C7 C8
C1
C6
MRF21085 Rev 3
Freescale Semiconductor, Inc...
Figure 2. MRF21085 Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
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MRF21085R3 MRF21085SR3 MRF21085LSR3 5
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TYPICAL CHARACTERISTICS
, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS Avg.) N-CDMA 30 VDD = 28 Vdc, IDQ = 1000 mA f1 = 2135 MHz, f2 = 2145 MHz 3.84 MHz Channel Bandwidth Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) G ps -25 -30 -35 -40 -45 -50 -55 IM3 (dBc), ACPR (dBc) -25 -30 -35 -40 -45 3rd Order -50 -55 -60 -65 4 10 Pout, OUTPUT POWER (WATTS) PEP 5th Order 7th Order 20 15 10 5 100 VDD = 28 Vdc IDQ = 1000 mA f1 = 2135 MHz f2 = 2145 MHz 45 40 , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB) 35 30 25
IM3
ACPR
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IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
-25 IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) -30 -35 -40 -45 -50 -55 4 10 Pout, OUTPUT POWER (WATTS) PEP 100 , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 24 22 20 18 16 ACPR 14 12 G ps 2090
Figure 4. Intermodulation Distortion Products versus Output Power
IRL VDD = 28 Vdc 2-Carrier W-CDMA Pout = 19 W (Avg.) 10 MHz Carrier Spacing IDQ = 1000 mA 3.84 MHz Channel Bandwidth Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) IM3
0 -10 -20 -30 -40 -50 -60 2190
IDQ = 700 mA 1300 mA 1150 mA 850 mA 1000 mA VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz
2110
2130
2150
2170
f, FREQUENCY (MHz)
Figure 5. Third Order Intermodulation Distortion versus Output Power
14.5 14 13.5 13 12.5 12 11.5 2 10 Pout, OUTPUT POWER (WATTS) VDD = 28 Vdc IDQ = 1000 mA f = 2140 MHz G ps 60 50 , DRAIN EFFICIENCY (%) , DRAIN EFFICIENCY (%) 40 30 20 10 35 0 100 130 34 24 42 IMD 41 40 39 38 37 36 G ps , POWER GAIN (dB)
Figure 6. 2-Carrier W-CDMA Broadband Performance
-24 -25 -26 -27 -28 -29 IDQ = 1000 mA f = 2140 MHz 10 MHz Tone Spacing 25 26 27 28 -30 -31 -32 29
VDD, DRAIN SUPPLY (V)
Figure 7. CW Performance
Figure 8. Two-Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply
MRF21085R3 MRF21085SR3 MRF21085LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 6
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TYPICAL CHARACTERISTICS
G ps , POWER GAIN (dB),, DRAIN EFFICIENCY (%) 14.5 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 40 IRL 35 30 25 20 15 10 2095 2110 2125 2140 2155 2170 f, FREQUENCY (MHz) VDD = 28 Vdc Pout = 90 W (PEP) IDQ = 1000 mA 10 MHz Tone Spacing IMD -15 -20 -25 -30 -35 -40 2185 -10
IDQ = 1300 mA 1150 mA
G ps , POWER GAIN (dB)
14 1000 mA 850 mA
13.5 700 mA 13 VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 4 10 Pout, OUTPUT POWER (WATTS) PEP 100
Gps
12.5
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Figure 9. Two-Tone Power Gain versus Output Power
Figure 10. Two-Tone Broadband Performance
IMD, INTERMODULATION DISTORTION (dBc)
-20 -25 -30 -35 -40 5th Order -45 7th Order -50 -55 0.1 VDD = 28 Vdc IDQ = 1000 mA f = 2140 MHz 3rd Order (dB)
0 -10 -20 -30 -40 -50 -60 -70 1 Df, TONE SPACING (kHz) 10 30 -20 -IM3 @ 3.84 MHz BW -15 -10 -ACPR @ 3.84 MHz BW
f1 3.84 MHz BW
f2 3.84 MHz BW
+ACPR @ 3.84 MHz BW
+IM3 @ 3.84 MHz BW -5 0 5 10 15 20
f, FREQUENCY (MHz)
Figure 11. Intermodulation Distortion Products versus Two - Tone Spacing
Figure 12. 2-Carrier W-CDMA Spectrum
MOTOROLA RF DEVICE DATA
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MRF21085R3 MRF21085SR3 MRF21085LSR3 7
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f = 2170 MHz
Zo = 5
Freescale Semiconductor, Inc...
Zload f = 2110 MHz f = 2170 MHz Zsource f = 2110 MHz
VDD = 28 V, IDQ = 1000 mA, Pout = 19 W Avg. f MHz 2110 2140 2170 Zsource 1.10 - j3.71 1.11 - j3.57 1.12 - j3.40 Zload 1.23 - j2.10 1.26 - j1.92 1.25 - j1.76
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 13. Series Equivalent Input and Output Impedance
MRF21085R3 MRF21085SR3 MRF21085LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 8
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NOTES
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MOTOROLA RF DEVICE DATA
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MRF21085R3 MRF21085SR3 MRF21085LSR3 9
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NOTES
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MRF21085R3 MRF21085SR3 MRF21085LSR3 MOTOROLA RF DEVICE DATA For More Information On This Product, 10
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PACKAGE DIMENSIONS
B G
1
2X
Q bbb
M
TA
M
B
M
3 (FLANGE)
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
Freescale Semiconductor, Inc...
H
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
CASE 465 - 06 ISSUE F NI - 780 MRF21085R3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
4X U (FLANGE)
B
1
4X Z (LID)
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
(FLANGE)
B
2
2X
K
D bbb
M
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
E A
(FLANGE)
A
CASE 465A - 06 ISSUE F NI - 780S MRF21085SR3, MRF21085LSR3
MOTOROLA RF DEVICE DATA
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MRF21085R3 MRF21085SR3 MRF21085LSR3 11
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